Properties of Cu(In.Ga)Se2 solar cells with new record efficiencies up to 21.7%

The properties of the most recent CIGS solar cells with conversion efficiencies up to 21.7% show a remarkable increase in Jsc. a high Voc level and improved FF when compared to former record results. The significant increase in Jsc can be explained by an optical gain through a thinner CdS buffer layer and a lower GGI minimum in the double-graded CIGS absorber. Seemingly. the very steep front grading does not harm the solar cell performance. The results may suggest that the PDT procedure has a passivating effect on (lattice-induced) defects. In addition. a general trend towards lower ideality factors and saturation current densities can be observed for PDT treated cells. The comparison of our results with the results of Solar Frontier (20.9%) permits the conclusion that a combination of PDT procedures and alternative buffer layers in one cell system has the potential for even higher efficiencies than reported here.

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