Impact of Threading Dislocations on the Design of GaAs and InGaP GaAs Solar Cells on Si Using Finite Element Analysis

We have investigated the impact of TDD on the performance of 1J n+ p GaAs and 2J n+ p InGaP GaAs cells on Si at AM 1.5G spectrum. The analysis indicates that in a 1J GaAs cell on Si with a 2.5-μm-thick GaAs base. an efficiency of greater than 23% can be realized at a TDD of 106 cm−۲ . For both 1J and 2J cell configurations. the onset of degradation in Voc was found to occur at a lower TDD than in Jsc . indicating that Voc was more sensitive to TDD. The 2J InGaP GaAs cell at a TDD of 106 cm−۲ exhibited an efficiency of 26.22% with a 2.5- and 0.9-μm-thick GaAs and InGaP base. respectively.

The design of the 2J InGaP GaAs cell on Si was optimized at a TDD of 106 cm−۲ to achieve current matching between the two subcells. By thinning the top InGaP cell from 0.9 to 0.38 μm. the 2J cell efficiency increased to 29.62% from 26.22%. In addition. at the interfaces in the top InGaP subcell. the SRVs below 104 cm s had negligible impact on the 2J cell performance. Thus. even in a lattice-mismatched 2J InGaP GaAs cell on Si with TDD of 106 cm−۲ . a theoretical conversion efficiency of greater than 29% at AM1.5G is achievable by tailoring the device design. Once experimentally realized. the III–V cell technology on Si would offer a new paradigm for the advancement of low-cost III–V solar cells and foster innovative avenues for both space and terrestrial applications.

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